Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB7N80TM FQB7N80TM

The FQB7N80TM is an 800V N-channel enhancement mode power MOSFET in a TO-263 (D2PAK) package, designed for high-efficiency switch-mode power supply applications. It has a maximum on-state resistance of 1.5 Ω at VGS = 10 V and a continuous drain current of 6.6 A. The device features low gate charge (typical 40 nC), low drain-source capacitance (typical 19 pF), fast switching, and 100% avalanche testing. It is rated for operation from -55°C to 150°C and has improved dv/dt capability for robust performance in demanding applications.