High voltage fast switching NPN power transistor with a built-in diode between collector and emitter, suitable for electronic ballast and switch mode power supplies. Packaged in TO-220AB with three pins, it has a collector-base voltage rating of 700 V, a collector-emitter voltage rating of 400 V, a continuous collector current of 8 A, and a maximum collector dissipation of 80 W at 25°C. The junction temperature ranges from -55°C to 150°C. The device meets AEC-Q200 qualification standards.
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | FJP3307DH1TU |
| Package Type | TO-220; TO-220AB |
