onsemi Single Bipolar Transistors FJA4213RTU

Description
PNP Epitaxial Silicon Transistor
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Description
PNP Epitaxial Silicon Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FJA4213RTU - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
 - FJA4213RTU - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - FJA4213RTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJA4213RTU-ND
Single Bipolar Transistors FJA4213RTU-ND
Bipolar (BJT) Transistor PNP 250V 17A 30MHz 130W Through Hole TO-3P

Bipolar (BJT) Transistor PNP 250V 17A 30MHz 130W Through Hole TO-3P

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TRANSISTORS - Transistors (BJT) - Single - FJA4213RTU - 067205-FJA4213RTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FJA4213RTU
067205-FJA4213RTU
TRANSISTORS - Transistors (BJT) - Single - FJA4213RTU 067205-FJA4213RTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067205-FJA4213RTU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 30MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P Maximum Current Collector: 17A VCEO Maximum Collector-Emitter Breakdown Voltage: 250V Max Vce (sat): 3V @ 800mA, 8A Collector Cut-off Current(Max): 5μA (ICBO) Typical Gain (hFE) (Min): 55 @ 1A, 5V Maximum Power Dissipation: 130W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067205-FJA4213RTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 30MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 17A
VCEO Maximum Collector-Emitter Breakdown Voltage: 250V
Max Vce (sat): 3V @ 800mA, 8A
Collector Cut-off Current(Max): 5μA (ICBO)
Typical Gain (hFE) (Min): 55 @ 1A, 5V
Maximum Power Dissipation: 130W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 450

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
FJA4213RTU
Bipolar Transistors - BJT FJA4213RTU
Bipolar Transistors - BJT PNP Epitaxial Silicon Transistor

Bipolar Transistors - BJT PNP Epitaxial Silicon Transistor

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJA4213RTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJA4213RTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJA4213RTU
TRANS PNP 250V 17A TO3P

TRANS PNP 250V 17A TO3P

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number FJA4213RTU FJA4213RTU-ND 067205-FJA4213RTU FJA4213RTU FJA4213RTU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - FJA4213RTU Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP
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