Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel
IGBT, MODULE, N-CH, 1.2KV, 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:515W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
MOD IGBT LOW PWR ECONO3-3
| Rochester Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FP100R12KT4PBPSA1 | 32AJ0608 | FP100R12KT4PBPSA1 |
| Product Name | Igbt, Module, N-Ch, 1.2Kv, 100A; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - IGBTs | |
| Package Type | AG-ECONO3B-411 | TO-3 |
