onsemi FGH75T65SQD-F155-01

Description
FGH75T65SQD - IGBT, Field Stop, Trench, 75A 650V
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Description
FGH75T65SQD - IGBT, Field Stop, Trench, 75A 650V
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Datasheet
Datasheet Summary
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The FGH75T65SQD is a 650 V, 75 A field stop trench IGBT in a TO-247-3LD package, designed for solar inverters, UPS, welders, telecom, energy storage systems, and PFC applications. It features a maximum junction temperature of 175°C, a typical collector-emitter saturation voltage of 1.6 V at 75 A and 15 V gate-emitter voltage, and a positive temperature coefficient for parallel operation. The device has a thermal resistance from junction to case of 0.4 °C/W for the IGBT and is RoHS compliant. It meets AEC-Q200 automotive qualification standards.

Datasheet Summary
Powered by GS/AI

The FGH75T65SQD is a 650 V, 75 A field stop trench IGBT in a TO-247-3LD package, designed for solar inverters, UPS, welders, telecom, energy storage systems, and PFC applications. It features a maximum junction temperature of 175°C, a typical collector-emitter saturation voltage of 1.6 V at 75 A and 15 V gate-emitter voltage, and a positive temperature coefficient for parallel operation. The device has a thermal resistance from junction to case of 0.4 °C/W for the IGBT and is RoHS compliant. It meets AEC-Q200 automotive qualification standards.

Suppliers

Company
Product
Description
Supplier Links
 - FGH75T65SQD-F155-01 - Rochester Electronics
Newburyport, MA, United States
FGH75T65SQD - IGBT, Field Stop, Trench, 75A 650V

FGH75T65SQD - IGBT, Field Stop, Trench, 75A 650V

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FGH75T65SQD-F155-01
Package Type TO-247; TO-247-3
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