IGBT Module Three Phase Inverter 1200V 55A 210W Chassis Mount Module
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel
IGBT, MODULE, N-CH, 1.2KV, 40A; Transistor Polarity:N Channel; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:210W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
IGBT MOD 1200V 55A 210W
| DigiKey | Rochester Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FP40R12KT3BOSA1-ND | FP40R12KT3BOSA1 | 12AC9630 | FP40R12KT3BOSA1 |
| Product Name | IGBT Modules | Igbt, Module, N-Ch, 1.2Kv, 40A; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - IGBTs | |
| Package Type | Module | AG-ECONO2-5 | TO-3 |
