onsemi FDS8926

Description
MOSFET 2N-Channel 30V 5.5A 8-SO
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Description
MOSFET 2N-Channel 30V 5.5A 8-SO
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Datasheet
Datasheet Summary
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The FDS8926A is a dual N-channel enhancement mode MOSFET in an SO-8 package, designed for low-voltage switching applications such as motor control and battery-powered circuits. It has a drain-source voltage rating of 30 V and a continuous drain current of 5.5 A per device. On-resistance is 0.030 Ω at V_GS = 4.5 V and 0.038 Ω at V_GS = 2.5 V. Thermal resistance junction-to-ambient is 78 °C/W on a 0.5 in² copper pad. The device operates from -55 °C to 150 °C. When both devices are operated simultaneously, power dissipation is rated at 2 W.

Datasheet Summary
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The FDS8926A is a dual N-channel enhancement mode MOSFET in an SO-8 package, designed for low-voltage switching applications such as motor control and battery-powered circuits. It has a drain-source voltage rating of 30 V and a continuous drain current of 5.5 A per device. On-resistance is 0.030 Ω at V_GS = 4.5 V and 0.038 Ω at V_GS = 2.5 V. Thermal resistance junction-to-ambient is 78 °C/W on a 0.5 in² copper pad. The device operates from -55 °C to 150 °C. When both devices are operated simultaneously, power dissipation is rated at 2 W.

Suppliers

Company
Product
Description
Supplier Links
 - FDS8926 - Rochester Electronics
Newburyport, MA, United States
MOSFET 2N-Channel 30V 5.5A 8-SO

MOSFET 2N-Channel 30V 5.5A 8-SO

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDS8926
Polarity N-Channel
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