The FDS8926A is a dual N-channel enhancement mode MOSFET in an SO-8 package, designed for low-voltage switching applications such as motor control and battery-powered circuits. It has a drain-source voltage rating of 30 V and a continuous drain current of 5.5 A per device. On-resistance is 0.030 Ω at V_GS = 4.5 V and 0.038 Ω at V_GS = 2.5 V. Thermal resistance junction-to-ambient is 78 °C/W on a 0.5 in² copper pad. The device operates from -55 °C to 150 °C. When both devices are operated simultaneously, power dissipation is rated at 2 W.
MOSFET 2N-Channel 30V 5.5A 8-SO
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS8926 |
| Polarity | N-Channel |