Small Signal Field-Effect Transistor, 4.1A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038370-FDS2070N3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 4.1A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 1884pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 78 mOhm @ 4.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
N-Channel 150V 4.1A (Ta) 3W (Ta) Surface Mount 8-SO
MOSFET N-CH 150V 4.1A 8SO
| Rochester Electronics | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | RF MOSFET Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | FDS2070N3 | 1038370-FDS2070N3 | FDS2070N3TR-ND | FDS2070N3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2070N3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |
| Package Type | DIP8 | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width) Exposed Pad" | 8-SOIC (0.154, 3.90mm Width) Exposed Pad |
| Packing Method | Tube; Tube | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
