onsemi Single Bipolar Transistors FJA4313RTU

Description
NPN Epitaxial Silicon Transistor
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Description
NPN Epitaxial Silicon Transistor
Request a Quote Datasheet

Suppliers

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Product
Description
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 - FJA4313RTU - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - FJA4313RTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJA4313RTU-ND
Single Bipolar Transistors FJA4313RTU-ND
Bipolar (BJT) Transistor NPN 250V 17A 30MHz 130W Through Hole TO-3PN

Bipolar (BJT) Transistor NPN 250V 17A 30MHz 130W Through Hole TO-3PN

Buy Now Datasheet
Singapore, Singapore
Through-Hole 250V 10A 130W Bipolar Transistor
276-FJA4313RTU
Through-Hole 250V 10A 130W Bipolar Transistor 276-FJA4313RTU
NPN BJT Transistor, 250V, 10A, 130W, 30MHz, Through Hole Product overview: FJA4313RTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 250V, 10A, 130W. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 250V, 10A, 130W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-FJA4313RTU can be used for catalog matching and distributor lookup.

NPN BJT Transistor, 250V, 10A, 130W, 30MHz, Through Hole Product overview: FJA4313RTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 250V, 10A, 130W. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 250V, 10A, 130W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-FJA4313RTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJA4313RTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJA4313RTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJA4313RTU
TRANS NPN 250V 17A TO3PN

TRANS NPN 250V 17A TO3PN

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number FJA4313RTU FJA4313RTU-ND 276-FJA4313RTU FJA4313RTU
Product Name Single Bipolar Transistors Through-Hole 250V 10A 130W Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type TO-3; TO-3P-3L TO-3; TO-3P-3, SC-65-3
Packing Method Tube; Tube Tube; Tube
IC(max) 17000 milliamps 17000 milliamps
VCEO 250 volts 250 volts
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