onsemi Single FETs, MOSFETs FDR840P

Description
Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Request a Quote Datasheet
Description
Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FDR840P - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Single FETs, MOSFETs - FDR840P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDR840P-ND
Single FETs, MOSFETs FDR840P-ND
P-Channel 20V 10A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8

P-Channel 20V 10A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR840P - 067068-FDR840P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR840P
067068-FDR840P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR840P 067068-FDR840P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067068-FDR840P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-8 Dimension: 8-SMD, Gull Wing Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 60nC @ 4.5V Max Input Capacitance: 4481pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 12 mOhm @ 10A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067068-FDR840P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-8
Dimension: 8-SMD, Gull Wing
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 60nC @ 4.5V
Max Input Capacitance: 4481pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 12 mOhm @ 10A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDR840P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDR840P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDR840P
MOSFET P-CH 20V 10A SUPERSOT8

MOSFET P-CH 20V 10A SUPERSOT8

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF MOSFET Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDR840P FDR840P-ND 067068-FDR840P FDR840P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDR840P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel
Package Type SUPERSOT-8 "8-LSOP (0.130"", 3.30mm Width)" SOT3; SuperSOT-8 8-LSOP (0.130, 3.30mm Width)
V(BR)DSS 20 volts
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