Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF7N10 FQPF7N10

The FQPF7N10 is a 100V N-channel MOSFET designed for low-voltage applications such as audio amplifiers, DC/DC converters, and motor control. It is packaged in a TO-220F-3 case with a maximum junction temperature of 175°C. The device has a drain-source on-state resistance of 0.35Ω at 10V gate-source voltage, a continuous drain current of 5.5A at 25°C case temperature, and a pulsed drain current of 22A. It supports 100% avalanche testing and has a peak diode recovery dv/dt of 6.0 V/ns. Thermal resistance is 6.52°C/W junction-to-case and 62.5°C/W junction-to-ambient. The gate charge is 5.8nC typical, with reverse transfer capacitance of 10pF typical. The part meets AEC-Q200 and RoHS standards.