The FGA40T65SHD is a 650 V, 40 A field stop trench IGBT designed for applications such as solar inverters, UPS, welders, telecom, ESS, and PFC. It is packaged in a TO-3PN case with a maximum junction temperature of 175°C and a thermal resistance from junction to case of 0.56°C/W for the IGBT. The device features a typical collector-emitter saturation voltage of 1.6 V at 40 A and 15 V gate-emitter voltage, and is RoHS compliant. It has a maximum power dissipation of 268 W at 25°C and supports pulsed collector currents up to 120 A. The input capacitance is 1995 pF, and the device exhibits a positive temperature coefficient for easy parallel operation.
Manufacturer: ON Semiconductor
Win Source Part Number: 871749-FGA40T65SHD
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT Trench Field Stop 650 V 80 A 268 W Through Hole TO-3PN
Package: Bulk
Package: TO-3P-3, SC-65-3
Mounting: Through Hole
Categories: Discrete Semiconductor Products
Case / Package: TO-3PN
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Quantity per package: 1
| Win Source Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 871749-FGA40T65SHD |
| Product Name | IGBTs - Single - FGA40T65SHD |
| Package Type | TO-3; SOT3; TO-3PN |
