onsemi Single FETs, MOSFETs FDS2070N7

N-Channel 150V 4.1A (Ta) 3W (Ta) Surface Mount 8-SO

Small Signal Field-Effect Transistor, 4.1A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

N-CH MOSFET 150V 4.1A 78mR SOIC Product overview: FDS2070N7 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 4.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 4.1A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS2070N7 can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1173894-FDS2070N7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 3W
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 150V
Id - Continuous Drain Current: 4.1A
Rds On (Maximum) at Id, Vgs: 78mOhm at 4.1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 53nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1884pF at 75V