onsemi TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3007R FJY3007R

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Request a Quote Datasheet
Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FJY3007R - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3007R - 1038969-FJY3007R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3007R
1038969-FJY3007R
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3007R 1038969-FJY3007R
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038969-FJY3007R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-523F Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 68 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038969-FJY3007R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-523F
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 68 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - FJY3007RTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
FJY3007RTR-ND
Single, Pre-Biased Bipolar Transistors FJY3007RTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SC-89-3

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SC-89-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJY3007R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJY3007R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJY3007R
TRANS PREBIAS NPN 50V SC89-3

TRANS PREBIAS NPN 50V SC89-3

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number FJY3007R 1038969-FJY3007R FJY3007RTR-ND FJY3007R
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3007R Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Pre-Biased NPN
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