Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel
IGBT Module Field Stop 3 Independent 650V 40A 156W Through Hole F2
IGBT Module Field Stop 3 Independent 650V 40A 156W Through Hole F2
IGBT Modules High Power Module
INSULATED GATE BIPOLAR TRANSISTO
| Rochester Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FPF2G120BF07AS | FPF2G120BF07AS-ND | FPF2G120BF07AS | FPF2G120BF07AS |
| Product Name | IGBT Modules | IGBT Modules | Discrete Semiconductor Products - Transistors - IGBTs | |
| Package Type | DIP Module32 | Module |
