Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel
IGBT, MODULE, NPN, 1.2KV, 150A; Transistor Polarity:Six NPN; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:750W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
IGBT MODULE LOW PWR ECONO3-4
| Rochester Electronics | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FS150R12KT4PBPSA1 | 32AJ0615 | FS150R12KT4PBPSA1 |
| Product Name | Igbt, Module, Npn, 1.2Kv, 150A; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - IGBTs | |
| Package Type | Module | TO-3 |
