onsemi Single FETs, MOSFETs FDS7088N7

Description
MOSFET N-CH 30V 23A 8SO
Request a Quote Datasheet
Description
MOSFET N-CH 30V 23A 8SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS7088N7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS7088N7
Single FETs, MOSFETs FDS7088N7
MOSFET N-CH 30V 23A 8SO

MOSFET N-CH 30V 23A 8SO

Supplier's Site
Single FETs, MOSFETs - FDS7088N7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS7088N7
Single FETs, MOSFETs FDS7088N7
MOSFET N-CH 30V 23A 8SO

MOSFET N-CH 30V 23A 8SO

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS7088N7 - 102391-FDS7088N7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS7088N7
102391-FDS7088N7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS7088N7 102391-FDS7088N7
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 102391-FDS7088N7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 23A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 48nC @ 5V Max Input Capacitance: 3845pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 mOhm @ 23A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 102391-FDS7088N7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 23A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 48nC @ 5V
Max Input Capacitance: 3845pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 23A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FDS7088N7TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS7088N7TR-ND
Single FETs, MOSFETs FDS7088N7TR-ND
N-Channel 30V 23A (Ta) 3W (Ta) Surface Mount 8-SO

N-Channel 30V 23A (Ta) 3W (Ta) Surface Mount 8-SO

Buy Now Datasheet
 - FDS7088N7 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS7088N7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS7088N7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS7088N7
MOSFET N-CH 30V 23A 8SO

MOSFET N-CH 30V 23A 8SO

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ODG (Origin Data Global) Win Source Electronics DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF Transistors
Product Number FDS7088N7 FDS7088N7 102391-FDS7088N7 FDS7088N7TR-ND FDS7088N7 FDS7088N7
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS7088N7 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 23000 milliamps 23000 milliamps
PD 3000 milliwatts 3000 milliwatts 3000 milliwatts
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