N-Channel 500V 18A (Tc) 208W (Tc) Through Hole TO-220-3
MOSFET N-CH 500V 18A TO220-3 Product overview: FQP18N50V2 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 18A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 18A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP18N50V2 can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204299-FQP18N50V2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 3290pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 265 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
MOSFET N-CH 500V 18A TO220-3
MOSFET; TRANSISTOR TYPE:MOSFET; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:500V; CONTINUOUS DRAIN CURRENT ID:18A; ON RESISTANCE RDS(ON):2. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | FQP18N50V2-ND | 278-FQP18N50V2 | FQP18N50V2 | 204299-FQP18N50V2 | FQP18N50V2 | 16125668 |
| Product Name | Single FETs, MOSFETs | 500V 18A TO220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP18N50V2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | Tube | TO-220; TO-220AB | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | |
| PD | 208000 milliwatts | 208000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
