Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-Channel 500V 18A (Tc) 208W (Tc) Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204299-FQP18N50V2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 3290pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 265 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
MOSFET N-CH 500V 18A TO220-3
MOSFET; TRANSISTOR TYPE:MOSFET; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:500V; CONTINUOUS DRAIN CURRENT ID:18A; ON RESISTANCE RDS(ON):2. FREE 2 YEAR RADWELL WARRANTY
| Rochester Electronics | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | FQP18N50V2 | FQP18N50V2-ND | 204299-FQP18N50V2 | FQP18N50V2 | 16125668 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP18N50V2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| rDS(on) | 0.2650 ohms | ||||
| Package Type | TO-220; TO-220AB | TO-220; TO-220-3 | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | |
| V(BR)DSS | 500 volts |
