onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860TYDTU FDPF3860TYDTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204125-FDPF3860TYDTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 38.2 mOhm @ 5.9A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860TYDTU - 204125-FDPF3860TYDTU - Win Source Electronics
    Win Source Electronics
  • FDPF3860TYDTU - Rochester Electronics
    Rochester Electronics
  • Single FETs, MOSFETs - FDPF3860TYDTU-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDPF3860TYDTU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204125-FDPF3860TYDTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 38.2 mOhm @ 5.9A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860TYDTU - 204125-FDPF3860TYDTU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860TYDTU
204125-FDPF3860TYDTU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860TYDTU 204125-FDPF3860TYDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204125-FDPF3860TYDTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F-3 (Y-Forming) Dimension: TO-220-3 Full Pack, Formed Leads Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 38.2 mOhm @ 5.9A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204125-FDPF3860TYDTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3 (Y-Forming)
Dimension: TO-220-3 Full Pack, Formed Leads
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 38.2 mOhm @ 5.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
- FDPF3860TYDTU - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDPF3860TYDTU
FDPF3860TYDTU
Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Single FETs, MOSFETs - FDPF3860TYDTU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDPF3860TYDTU-ND
Single FETs, MOSFETs FDPF3860TYDTU-ND
N-Channel 100V 20A (Tc) 33.8W (Tc) Through Hole TO-220F-3 (Y-Forming)

N-Channel 100V 20A (Tc) 33.8W (Tc) Through Hole TO-220F-3 (Y-Forming)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDPF3860TYDTU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDPF3860TYDTU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDPF3860TYDTU
MOSFET N-CH 100V 20A TO220F-3

MOSFET N-CH 100V 20A TO220F-3

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors RF Transistors
Product Number 204125-FDPF3860TYDTU FDPF3860TYDTU FDPF3860TYDTU-ND FDPF3860TYDTU
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860TYDTU Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts
PD 33800 milliwatts
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