Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204125-FDPF3860TYDTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3 (Y-Forming)
Dimension: TO-220-3 Full Pack, Formed Leads
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 38.2 mOhm @ 5.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
N-Channel 100V 20A (Tc) 33.8W (Tc) Through Hole TO-220F-3 (Y-Forming)
MOSFET N-CH 100V 20A TO220F-3
| Rochester Electronics | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | FDPF3860TYDTU | 204125-FDPF3860TYDTU | FDPF3860TYDTU-ND | FDPF3860TYDTU |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF3860TYDTU | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220F-3 (Y-Forming) | TO-220; TO-220-3 Full Pack, Formed Leads | TO-220; TO-220-3 Full Pack, Formed Leads |
| V(BR)DSS | 100 volts |
