Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel
Manufacturer: ON Semiconductor
Win Source Part Number: 919258-FPF2C110BI07A
Operating Temperature Range: -40°C ~ 150°C
Features: IGBT Module - Half Bridge 650 V 40 A 300 W Through Hole F2
Package: 30-DIP Module
Package: Tray
Mounting: Through Hole
Family Name: FPF2C110
Categories: Discrete Semiconductor Products
Case / Package: F2
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 78 pct.
Supply and Demand Status: Balance
Quantity per package: 70
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 44 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
PIM F2 PV 650V 40A
| Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FPF2C110BI07AS2 | 919258-FPF2C110BI07AS2 | FPF2C110BI07AS2 |
| Product Name | IGBTs - Modules - FPF2C110BI07AS2 | Discrete Semiconductor Products - Transistors - IGBTs | |
| Package Type | Module | SOT3; F2 |
