onsemi 650 V MOSFET Transistor FPF2C110BI07AS2

Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel

Power Integrated Module (PIM), F2, SiC Diode + MOSFET + IGBT, 650 V, 70-JTRAY Product overview: FPF2C110BI07AS2 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, MOSFET Transistor, IGBT Modules. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-FPF2C110BI07AS2 can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 919258-FPF2C110BI07AS2
Operating Temperature Range: -40°C ~ 150°C
Features: IGBT Module - Half Bridge 650 V 40 A 300 W Through Hole F2
Package: 30-DIP Module
Package: Tray
Mounting: Through Hole
Family Name: FPF2C110
Categories: Discrete Semiconductor Products
Case / Package: F2
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 78 pct.
Supply and Demand Status: Balance
Quantity per package: 70
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 44 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095