onsemi Single Bipolar Transistors FJP5554

Description
Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-220-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - FJP5554-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJP5554-ND
Single Bipolar Transistors FJP5554-ND
Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-220-3

Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - FJP5554 - 1174350-FJP5554 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FJP5554
1174350-FJP5554
TRANSISTORS - Transistors (BJT) - Single - FJP5554 1174350-FJP5554
Manufacturer: ON Semiconductor Win Source Part Number: 1174350-FJP5554 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 400V Current - Collector Cutoff (Maximum): 250μA Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1.5V at 1A, 3.5A DC Current Gain (hFE) (Minimum) at Ic, Vce: 20 at 800mA, 3V Maximum Power: 70W

Manufacturer: ON Semiconductor
Win Source Part Number: 1174350-FJP5554
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 400V
Current - Collector Cutoff (Maximum): 250μA
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1.5V at 1A, 3.5A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 20 at 800mA, 3V
Maximum Power: 70W

Buy Now
 - FJP5554 - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Supplier's Site Datasheet
TRANS NPN 400V 4A TO-220 - 598-FJP5554 - Utmel Electronic Limited
Hong Kong, China
TRANS NPN 400V 4A TO-220
598-FJP5554
TRANS NPN 400V 4A TO-220 598-FJP5554
TRANS NPN 400V 4A TO-220

TRANS NPN 400V 4A TO-220

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJP5554 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJP5554
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJP5554
TRANS NPN 400V 4A TO220-3

TRANS NPN 400V 4A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Power MOSFET Transistors Bipolar RF Transistors
Product Number FJP5554-ND 1174350-FJP5554 FJP5554 598-FJP5554 FJP5554
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - FJP5554 TRANS NPN 400V 4A TO-220 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220AB
Packing Method Bulk; Bulk Tube; Tube
TJ 150 C (302 F)
Power Gain 20 dB
Unlock Full Specs
to access all available technical data