PNP silicon transistor with built-in resistors in SC-59 package, 6.0 mm × 2.8 mm. Collector to emitter voltage rated at -50 V, collector current at -100 mA, and total power dissipation at 200 mW. Input resistor R1 is 10.0 kΩ with typical tolerance, and no emitter-to-base resistor is present. Complementary to FA4xxx series. Junction temperature rated up to 150 °C.
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | FN4A4Z-T1B-AT |
| Polarity | PNP |
