onsemi Single FETs, MOSFETs FDP100N10

FDP100N10 - Power Field-Effect Transistor, 75A, 100V, 0.01ohm, N-Channel, MOSFET, TO-220AB

FDP100N10 - Power Field-Effect Transistor, 75A, 100V, 0.01ohm, N-Channel, MOSFET, TO-220AB

N-Channel 100V 75A (Tc) 208W (Tc) Through Hole TO-220-3

N-Channel MOSFET 100V 75A 10mR TO-220AB Product overview: FDP100N10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP100N10 can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040264-FDP100N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 7300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Quantity per package: 800