onsemi FET, MOSFET Arrays FDS8934A

Description
Mosfet Array 2 P-Channel (Dual) 20V 4A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array 2 P-Channel (Dual) 20V 4A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDS8934A-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS8934A-ND
FET, MOSFET Arrays FDS8934A-ND
Mosfet Array 2 P-Channel (Dual) 20V 4A 900mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 4A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8934A - 204131-FDS8934A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8934A
204131-FDS8934A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8934A 204131-FDS8934A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204131-FDS8934A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 28nC @ 5V Max Input Capacitance: 1130pF @ 10V Maximum Rds On at Id,Vgs: 55 mOhm @ 4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204131-FDS8934A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 28nC @ 5V
Max Input Capacitance: 1130pF @ 10V
Maximum Rds On at Id,Vgs: 55 mOhm @ 4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics

Buy Now Datasheet
 - FDS8934A - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
MOSFET 2P-CH 20V 4A 8SOIC - 598-FDS8934A - Utmel Electronic Limited
Hong Kong, China
MOSFET 2P-CH 20V 4A 8SOIC
598-FDS8934A
MOSFET 2P-CH 20V 4A 8SOIC 598-FDS8934A
MOSFET 2P-CH 20V 4A 8SOIC

MOSFET 2P-CH 20V 4A 8SOIC

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS8934A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS8934A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS8934A
MOSFET 2P-CH 20V 4A 8SOIC

MOSFET 2P-CH 20V 4A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS8934A-ND 204131-FDS8934A FDS8934A 598-FDS8934A FDS8934A
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8934A MOSFET 2P-CH 20V 4A 8SOIC Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO SOIC8
Polarity P-Channel
V(BR)DSS 20 volts -20 volts
PD 900 milliwatts 2000 milliwatts
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