onsemi Single Bipolar Transistors FJP3305H2TU

Description
NPN Silicon Transistor
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Description
NPN Silicon Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FJP3305H2TU - Rochester Electronics
Newburyport, MA, United States
NPN Silicon Transistor

NPN Silicon Transistor

Supplier's Site Datasheet
 - FJP3305H2TU - Rochester Electronics
Newburyport, MA, United States
NPN Silicon Transistor

NPN Silicon Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - FJP3305H2TU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJP3305H2TU-ND
Single Bipolar Transistors FJP3305H2TU-ND
Bipolar (BJT) Transistor NPN 400V 4A 4MHz 75W Through Hole TO-220-3

Bipolar (BJT) Transistor NPN 400V 4A 4MHz 75W Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - FJP3305H2TU - 016271-FJP3305H2TU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FJP3305H2TU
016271-FJP3305H2TU
TRANSISTORS - Transistors (BJT) - Single - FJP3305H2TU 016271-FJP3305H2TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016271-FJP3305H2TU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 4MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 400V Max Vce (sat): 1V @ 1A, 4A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 26 @ 1A, 5V Maximum Power Dissipation: 75W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016271-FJP3305H2TU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 4MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 1V @ 1A, 4A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 26 @ 1A, 5V
Maximum Power Dissipation: 75W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
FJP3305H2TU
Bipolar Transistors - BJT FJP3305H2TU
Bipolar Transistors - BJT NPN Silicon Trans

Bipolar Transistors - BJT NPN Silicon Trans

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJP3305H2TU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJP3305H2TU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJP3305H2TU
TRANS NPN 400V 4A TO220-3

TRANS NPN 400V 4A TO220-3

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number FJP3305H2TU FJP3305H2TU-ND 016271-FJP3305H2TU FJP3305H2TU FJP3305H2TU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - FJP3305H2TU Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN
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