onsemi Single, Pre-Biased Bipolar Transistors FJV4109RMTF

Description
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Request a Quote Datasheet
Description
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FJV4109RMTF - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - FJV4109RMTF-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
FJV4109RMTF-ND
Single, Pre-Biased Bipolar Transistors FJV4109RMTF-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40V 100mA 200MHz 200mW Surface Mount SOT-23-3

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40V 100mA 200MHz 200mW Surface Mount SOT-23-3

Buy Now Datasheet
Singapore
200MW SOT23 Bipolar Transistor
292-FJV4109RMTF
200MW SOT23 Bipolar Transistor 292-FJV4109RMTF
TRANS PREBIAS PNP 200MW SOT23-3 Product overview: FJV4109RMTF from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-FJV4109RMTF can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 200MW SOT23-3 Product overview: FJV4109RMTF from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-FJV4109RMTF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV4109RMTF - 067256-FJV4109RMTF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV4109RMTF
067256-FJV4109RMTF
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV4109RMTF 067256-FJV4109RMTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067256-FJV4109RMTF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 300mV @ 1mA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 1mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067256-FJV4109RMTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 300mV @ 1mA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 1mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJV4109RMTF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJV4109RMTF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJV4109RMTF
TRANS PREBIAS PNP 40V SOT23-3

TRANS PREBIAS PNP 40V SOT23-3

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number FJV4109RMTF FJV4109RMTF-ND 292-FJV4109RMTF 067256-FJV4109RMTF FJV4109RMTF
Product Name Single, Pre-Biased Bipolar Transistors 200MW SOT23 Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV4109RMTF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP PNP; PNP - Pre-Biased
Package Type SOP8 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236)
IC(max) 100 milliamps 100 milliamps
VCEO 40 volts 40 volts
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