onsemi TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3005R FJY3005R

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Request a Quote Datasheet
Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FJY3005R - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3005R - 106431-FJY3005R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3005R
106431-FJY3005R
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3005R 106431-FJY3005R
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 106431-FJY3005R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-523F Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 106431-FJY3005R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-523F
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJY3005R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJY3005R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJY3005R
TRANS PREBIAS NPN 50V SOT523F

TRANS PREBIAS NPN 50V SOT523F

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number FJY3005R 106431-FJY3005R FJY3005R
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3005R Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Pre-Biased
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