onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4410 FDS4410

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067077-FDS4410 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 1340pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4410 - 067077-FDS4410 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDS4410-ND - DigiKey
    DigiKey
  • FDS4410 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS4410 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067077-FDS4410 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 1340pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4410 - 067077-FDS4410 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4410
067077-FDS4410
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4410 067077-FDS4410
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067077-FDS4410 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 1340pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067077-FDS4410
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1340pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FDS4410-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS4410-ND
Single FETs, MOSFETs FDS4410-ND
N-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
- FDS4410 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDS4410
FDS4410
Small Signal Field-Effect Transistor

Small Signal Field-Effect Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS4410 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS4410
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS4410
MOSFET N-CH 30V 10A 8SOIC

MOSFET N-CH 30V 10A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF MOSFET Transistors RF Transistors
Product Number 067077-FDS4410 FDS4410-ND FDS4410 FDS4410
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4410 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 2500 milliwatts
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