Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5N20LTF FQD5N20LTF

The FQD5N20LTF is an N-channel enhancement mode MOSFET in the QFET series, designed for high-efficiency switching applications such as DC/DC converters and motor control. It is packaged in a TO-252-3 (DPAK) surface-mount case with dimensions of 6.60 mm × 5.34 mm × 2.30 mm. The device has a drain-source voltage rating of 200 V and a continuous drain current of 3.8 A at 25°C case temperature. It features an on-state resistance of 1.2 Ω at 10 V gate-source voltage, a typical gate charge of 4.8 nC, and a reverse transfer capacitance of 6.0 pF. The MOSFET is 100% avalanche tested, supports peak drain-source diode forward current up to 15.2 A, and has a junction temperature range of -55°C to +150°C. It meets AEC-Q200 standards and is suited for direct logic-level gate drive operation. The part is fully production qualified.