Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel
IGBT MODULE 650V 40A 156W F2
| Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FPF2G120BF07ASP | FPF2G120BF07ASP |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs | |
| Packing Method | Tray | Tray |
