onsemi Single Bipolar Transistors FJAF4210YTU

Description
PNP Epitaxial Silicon Transistor
Request a Quote Datasheet
Description
PNP Epitaxial Silicon Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FJAF4210YTU - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
 - FJAF4210YTU - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - FJAF4210YTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJAF4210YTU-ND
Single Bipolar Transistors FJAF4210YTU-ND
Bipolar (BJT) Transistor PNP 140V 10A 30MHz 80W Through Hole TO-3PF

Bipolar (BJT) Transistor PNP 140V 10A 30MHz 80W Through Hole TO-3PF

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - FJAF4210YTU - 067208-FJAF4210YTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FJAF4210YTU
067208-FJAF4210YTU
TRANSISTORS - Transistors (BJT) - Single - FJAF4210YTU 067208-FJAF4210YTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067208-FJAF4210YTU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 30MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3PF Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 140V Max Vce (sat): 500mV @ 500mA, 5A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 90 @ 3A, 4V Maximum Power Dissipation: 80W Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067208-FJAF4210YTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 30MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3PF
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 140V
Max Vce (sat): 500mV @ 500mA, 5A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 90 @ 3A, 4V
Maximum Power Dissipation: 80W
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJAF4210YTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJAF4210YTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJAF4210YTU
TRANS PNP 140V 10A TO3PF

TRANS PNP 140V 10A TO3PF

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number FJAF4210YTU FJAF4210YTU-ND 067208-FJAF4210YTU FJAF4210YTU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - FJAF4210YTU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP
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