onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FDS3572_NL

Description
Win Source Part Number: 965395-FDS3572_NL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: PowerTrench® Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): FDS3572_NLFDS3572-NL ; FDS3572NL; ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0095 Mfr: Fairchild Semiconductor Other Names: FAIFSCFDS3572_NL,215 6-FDS3572_NL Drive Voltage (Max Rds On, Min Rds On): 6V, 10V RoHS Status: Not applicable
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Description
Win Source Part Number: 965395-FDS3572_NL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: PowerTrench® Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): FDS3572_NLFDS3572-NL ; FDS3572NL; ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0095 Mfr: Fairchild Semiconductor Other Names: FAIFSCFDS3572_NL,215 6-FDS3572_NL Drive Voltage (Max Rds On, Min Rds On): 6V, 10V RoHS Status: Not applicable
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 965395-FDS3572_NL - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
965395-FDS3572_NL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 965395-FDS3572_NL
Win Source Part Number: 965395-FDS3572_NL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: PowerTrench® Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): FDS3572_NLFDS3572-NL ; FDS3572NL; ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0095 Mfr: Fairchild Semiconductor Other Names: FAIFSCFDS3572_NL,215 6-FDS3572_NL Drive Voltage (Max Rds On, Min Rds On): 6V, 10V RoHS Status: Not applicable

Win Source Part Number: 965395-FDS3572_NL
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: PowerTrench®
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): FDS3572_NLFDS3572-NL; FDS3572NL;
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.29.0095
Mfr: Fairchild Semiconductor
Other Names: FAIFSCFDS3572_NL,2156-FDS3572_NL
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
RoHS Status: Not applicable

Buy Now Datasheet
 - FDS3572_NL - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 8.9A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 8.9A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS3572_NL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS3572_NL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS3572_NL
N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Power MOSFET RF Transistors
Product Number 965395-FDS3572_NL FDS3572_NL FDS3572_NL
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
QG 41 nC
PD 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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