onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FDS3572_NL

Power Field-Effect Transistor, 8.9A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Win Source Part Number: 965395-FDS3572_NL
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: PowerTrench®
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): FDS3572_NLFDS3572-NL; FDS3572NL;
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.29.0095
Mfr: Fairchild Semiconductor
Other Names: FAIFSCFDS3572_NL,2156-FDS3572_NL
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
RoHS Status: Not applicable