Infineon Technologies AG Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANS2N6849 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6849 A... | |
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTX2N6845 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6845 A... | |
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTX2N6849 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6849 A... | |
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6845 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6845 A... | |
| -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6849 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6849 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package - A JANS2N7237U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN9240 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7237U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN9240 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7237U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN9240 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANS2N6851 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6851 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTX2N6851 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6851 A... | |
| -200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6851 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6851 A... | |
| 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package - A JANTX2N7336 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts... | |
| 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package - A JANTXV2N7336 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts... | |
| 100V Quad N-Channel MOSFET in a MO-036AB package - A JANTX2N7334 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFG110 A IRFG110... | |
| 100V Quad N-Channel MOSFET in a MO-036AB package - A JANTXV2N7334 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFG110 A IRFG110... | |
| 100V Quad P-Channel MOSFET in a MO-036AB package - A JANTX2N7335 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFG9110 A IRFG9110... | |
| 100V Quad P-Channel MOSFET in a MO-036AB package - A JANTXV2N7335 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFG9110 A IRFG9110... | |
| 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTX2N6796 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6796 A... | |
| 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6796 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6796 A... | |
| 100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A JANTX2N7218 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFM140 A... | |
| 100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A JANTXV2N7218 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFM140 A... | |
| 200V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7219U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN240 A... | |
| 200V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7219U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN240 A... | |
| 200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTX2N6784 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6784 A... | |
| 200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A JANTXV2N6784 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6784 A... | |
| 200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A JANTXV2N7225 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFM250 A... | |
| 400V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANTX2N6800U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts JANTX2N6800U... | |
| 400V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANTXV2N6800U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts JANTX2N6800U... | |
| 400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7227U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN350 A... | |
| 400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7227U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFN350 A... | |
| 500V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANTX2N6802U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFE430... | |
| 500V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANTXV2N6802U with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFE430... | |
| 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A JANTX2N6770 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6770 A... | |
| 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A JANTXV2N6770 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6770 A... | |
| Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, QPL Features Low RDS(on) Single event effect (SEE) hardened Low total gate charge... | |
| Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 krad(Si) TID, QPL Features Low RDS(on) Single event effect (SEE) hardened Low total gate charge... | |
| Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package Slash sheet Similar Parts IRHNMC597110 SMD-0.2, 100 krad(Si) TID, COTS IRHNM597110 SMD-0.2, 100 krad(Si) TID, COTS JANSR2N7506U8C SMD-0.2,... | |
| Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Identical pre-... | |
| Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Low RDS(on)</li><li>Prot on tolerant Low total... | |
| Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total... | |
| Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total... | |
| Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Identical pre- and post-electrical test conditions... | |
| Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Identical pre- and post-electrical test conditions... | |
| Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Identical pre- and post-electrical test conditions... | |
| Rad hard, -200V, -4A, single, P-channel MOSFET, R4 in an 18-pin LCC packageage - 18-pin LCC, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total... | |
| Rad hard, -200V, -4A, single, P-channel MOSFET, R4 in an 18-pin LCC packageage - 18-pin LCC, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total... | |
| Rad hard, -200V, -8.0A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -200V, -8.0A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge... | |
| Rad hard, -30V, -45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL Features Low RDS(on) Fast Switching Single event effect... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UBN, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UBN, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBC, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBC, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBCN, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened. 5V CMOS and TTL Compatible Fast... | |
| Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened. 5V CMOS and TTL Compatible Fast... | |
| Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 11.7A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Repetitive avalanche ratings Dynamic... | |
| Rad hard, 100V, 11.7A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Repetitive avalanche ratings Dynamic... | |
| Rad hard, 100V, 22A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-0.5, 100 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Fast switching... | |
| Rad hard, 100V, 22A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-0.5, 300 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Fast switching... | |
| Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad TID, QPL Features Low RDS(on) Fast switching Single event effect (SEE) hardened. Low total... | |
| Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 300 krad TID, QPL Features Low RDS(on) Fast switching Single event effect (SEE) hardened. Low total... | |
| Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on)</li><li>Fast switching Low total gate... | |
| Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total... | |
| Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 500 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total... | |
| Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL Features Single event effect (SEE) hardened Ultra Low RDS(on) Low total gate... | |
| Rad hard, 200V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL Features Low RDS(on) Fast Switching Single event effect... | |
| Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL Features Low RDS(on) Fast Switching Single event effect... | |
| Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 300 krad(Si) TID, QPL Features Low RDS(on) Fast Switching Single event effect... | |
| Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total... | |
| Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total... | |
| Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total... | |
| Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC, 500 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total... | |
| Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 250V, 10A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on)... | |
| Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on)... | |
| Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on)... | |
| Rad hard, 250V, 45A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Ultra low RDS(on). Low total gate... | |
| Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Ultra low RDS(on). Low total gate... | |
| Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 500 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Ultra low RDS(on). Low total gate... | |
| Rad hard, 400V, 5.3A, single, N-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL Slash sheet Similar Parts IRHNJ7330SE SMD-0.5, 100 krad(Si) TID, COTS JANSR2N7465U3 SMD-0.5,... | |
| Rad hard, 500V, 2.6A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Ultra low RDS(on) Low total gate... | |
| Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBC, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBC, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBCN, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast... | |
| Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total... | |
| Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total... | |
| Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 300 krad TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge... | |
| 200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A JANTX2N7225 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFM250 A... | |
| ISC165N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 150 V products. OptiMOS™ 6 150 V technology was designed to fulfill... | |
| OptiMOS™ 5 power MOSFET 100 V, 2.6 mOhm, 248 A, in sTOLL - 7x8 mm2 power MOS package The IST026N10NM5 OptiMOS™ 5 power MOSFET 100 V in sTOLL package... | |
| OptiMOS™ 5 power MOSFET 25 V, 2.4 mΩ, smallest form factor in PQFN 2x2 package With the new BIC OptiMOS™ 5 in 25V and 30V product family Infineon offers a... | |
| OptiMOS™ 5 power MOSFET 30 V, 3.6 mΩ, smallest form factor in PQFN 2x2 package With the new BIC OptiMOS™ 5 in 25V and 30V product family Infineon offers a... | |
| OptiMOS™ 5 Single N-Channel Linear FET 100 V, 11.3 mΩ, 63 A in a PQFN 3.3x3.3 package ISZ113N10NM5LF2 is Infineon’s new best-in-class 100 V OptiMOS™ 5 Linear FET in a... | |
| OptiMOS™ 6 dual N-channel 40 V MOSFETs in a scalable power block package Dual N-channel MOSFETs in PQFN 6.3x6.0 features very low RDS(on) of 0.88 mΩ each with Q1/Q2... | |
| OptiMOS™ 6 dual N-channel 40 V MOSFETs in scalable power block with dual-side cooling capability Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 0.88 mΩ each with... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in PQFN 3.3x3.3 package ISZ080N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in PQFN 3.3x3.3 package ISZ230N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC230N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete... | |
| OptiMOS™ 6 power MOSFET 135 V Normal Level in PQFN 3.3x3.3 package OptiMOS™ 6 135 V targets high-power motor-drive applications such as LEVs, e-forklifts, power and gardening tools, but also... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in S308 package ISZ173N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive... | |
| OptiMOS™ 6 power MOSFET 200 V in PQFN 3.3x3.3 package ISZ520N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high... | |
| OptiMOS™ 6 power MOSFET 40 V in smallest form factor PQFN 2x2 package With the new best-in-class OptiMOSTM 6 product family, Infineon offers a benchmark solution for efficiency in... | |
| OptiMOS™ 6 power MOSFET 40V sTOLL - 7x8mm2 power MOS package The OptiMOS™ 6 power MOSFET 40V in sTOLL package features very low RDS(on) of 0.60mOhm and 475A... | |
| OptiMOS™ 6 power MOSFET logic level 120 V in PQFN 3.3 x 3.3 package This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 10.6... | |
| OptiMOS™ 6 power MOSFET logic level 120 V in PQFN 3.3 x 3.3 package This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 33... | |
| OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package This is a logic level 120 V MOSFET in SuperSO8 packaging with 32 mOhm on-resistance. ISC320N12LM6 is part of... | |
| OptiMOS™ 7 power MOSFET 15 V in PQFN 2x2 ISK018NE1LM7 is part of the first 15 V rated trench power MOSFETs portfolio in the industry, featuring very low RDS... | |
| OptiMOS™ low-voltage power MOSFETs - perfectly addressing the needs of charger and adapter designs OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast... | |
| OptiMOS™ P-Channel MOSFET 100V in SOT-223 OptiMOS™ P-Channel MOSFETs 100V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main... | |
| OptiMOS™ P-Channel MOSFET 150V in SOT-223 OptiMOS™ P-Channel MOSFETs 150V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main... | |
| OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with... | |
| P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel 60V power MOSFETs in SOT-223 package is the new technology targeted for... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 100 V in PQFN 3.3x3.3 package represents the new technology targeted for battery... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 100 V in SuperSO8 package represents the new technology targeted for battery management,... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 150 V in PQFN 3.3x3.3 package represents the new technology targeted for battery... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 150 V in SuperSO8 package represents the new technology targeted for battery management,... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 60 V in SuperSO8 package represents the new technology targeted for battery management,... | |
| P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery... | |
| P-channel power MOSFETs 100 V in SOT-223 package for automotive applications ISP16DP10LMA features a low RDS(on) of 0.067 Ohm for easy power loss management making it the best-in-class MOSFET... | |
| StrongIRFET™ 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 2.8 mOhm in a... | |
| StrongIRFET™ 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 3.3 mOhm in a... | |
| StrongIRFET™ 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 5.6 mOhm in a... | |
| Summary of Features Dual N-channel Logic Level Common Drain - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested... | |
| The OptiMOS™ 5 60V power MOSFET ISZ034N06LM5 comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies (SMPS), for telecom... | |
| The Press Pack IGBT offers 2000 A with internal freewheeling diode using Infineon Trench 4.5 kV IGBT chips. Summary of Features Behavior in case of a failure Hermetically sealed housing... | |
| The Press Pack IGBT offers 3000 A without internal freewheeling diode using Infineon Trench 4.5 kV IGBT chips. Summary of Features Behavior in case of a failure Hermetically sealed housing... | |
| Unleash maximum power with the next best-in-class OptiMOS™ 7 40 V power MOSFET in a PQFN 5x6 ISCH42N04LM7 is the best-in-class 40 V power MOSFET in a PQFN 5x6 in... |
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