Infineon Technologies AG Single FETs, MOSFETs IRLU014N

Description
N-Channel 55V 10A (Tc) 28W (Tc) Through Hole I-PAK
Request a Quote Datasheet
Description
N-Channel 55V 10A (Tc) 28W (Tc) Through Hole I-PAK
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IRLU014N-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLU014N-ND
Single FETs, MOSFETs IRLU014N-ND
N-Channel 55V 10A (Tc) 28W (Tc) Through Hole I-PAK

N-Channel 55V 10A (Tc) 28W (Tc) Through Hole I-PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU014N - 1047663-IRLU014N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU014N
1047663-IRLU014N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU014N 1047663-IRLU014N
Manufacturer: Infineon Technologies Win Source Part Number: 1047663-IRLU014N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 7.9nC @ 5V Max Input Capacitance: 265pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 140 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1047663-IRLU014N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7.9nC @ 5V
Max Input Capacitance: 265pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 140 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLU014N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLU014N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLU014N
MOSFET N-CH 55V 10A I-PAK

MOSFET N-CH 55V 10A I-PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRLU014N-ND 1047663-IRLU014N IRLU014N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU014N Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; I-Pak TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 55 volts
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