Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR3410CPBF IRLR3410CPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047602-IRLR3410CPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 34nC @ 5V Max Input Capacitance: 800pF @ 25V Maximum Rds On at Id,Vgs: 105 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047602-IRLR3410CPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 34nC @ 5V Max Input Capacitance: 800pF @ 25V Maximum Rds On at Id,Vgs: 105 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR3410CPBF - 1047602-IRLR3410CPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR3410CPBF
1047602-IRLR3410CPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR3410CPBF 1047602-IRLR3410CPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047602-IRLR3410CPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 34nC @ 5V Max Input Capacitance: 800pF @ 25V Maximum Rds On at Id,Vgs: 105 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1047602-IRLR3410CPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 34nC @ 5V
Max Input Capacitance: 800pF @ 25V
Maximum Rds On at Id,Vgs: 105 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047602-IRLR3410CPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR3410CPBF
Polarity N-Channel; N-Channel
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