Infineon Technologies AG Single FETs, MOSFETs IRLL024NPBF

N-Channel 55V 3.1A (Ta) 1W (Ta) Surface Mount SOT-223

Manufacturer: Infineon Technologies
Win Source Part Number: 1047565-IRLL024NPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 3.1A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 15.6nC @ 5V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

MOSFET N-CH 55V 3.1A SOT223 Product overview: IRLL024NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLL024NPBF can be used for catalog matching and distributor lookup.