The Infineon N Channel MOSFET transistor, part number 42Y0442, is designed for high-efficiency applications with a continuous drain current rating of 42 A and a maximum drain-to-source voltage of 55 V. It features an ultra-low on-resistance of 0.0065 Ohm, which contributes to reduced power losses during operation. The device operates effectively at a junction temperature of up to 175¬8C, making it suitable for demanding environments. This MOSFET is characterized by fast switching capabilities and a repetitive avalanche rating, enhancing its reliability in various applications. It is RoHS compliant and designed using advanced processing techniques to ensure optimal performance. The transistor is packaged in a D-Pak configuration, facilitating easy integration into electronic circuits. Engineers considering this component for their projects will find it suitable for applications requiring high current handling and low thermal resistance.
MOSFET N-CH 55V 42A DPAK Product overview: IRLR3705ZTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 42A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 42A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLR3705ZTRPBF can be used for catalog matching and distributor lookup.
N-Channel 55V 42A (Tc) 130W (Tc) Surface Mount D-Pak
N-Channel 55V 42A (Tc) 130W (Tc) Surface Mount D-Pak
N-Channel 55V 42A (Tc) 130W (Tc) Surface Mount D-Pak
Manufacturer: Infineon Technologies
Win Source Part Number: 017801-IRLR3705ZTRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Family Name: IRLR3705
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 42A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 66nC @ 5V
Max Input Capacitance: 2900pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 8 mOhm @ 42A, 10V
Alternative Parts (Cross-Reference): NP55N055SDG-E2-AY; NP55N055SDG-E2-AZ; NP55N055SUG-E2-AZ;
Introduction Date: December 21, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
MOSFET N-CH 55V 42A DPAK
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MOSFET N-CH 55V 42A DPAK
MOSFET Transistor, N Channel, 42 A, 55 V, 0.0065 ohm, 10 V, 3 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRLR3705ZTRPBF | IRLR3705ZTRPBFTR-ND | 2579460 | 017801-IRLR3705ZTRPBF | IRLR3705ZTRPBF | IRLR3705ZTRPBF | IRLR3705ZTRPBF | 42Y0442 |
| Product Name | 55V 42A DPAK MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR3705ZTRPBF | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 42 A, 55 V, 0.0065 Ohm, 10 V, 3 V Rohs Compliant Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | |||||
| Transconductance | 0.0890 kS | |||||||
| PD | 130 milliwatts | 130000 milliwatts | 130000 milliwatts |
