Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR3705ZTRPBF IRLR3705ZTRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017801-IRLR3705ZTRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Family Name: IRLR3705 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 42A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 66nC @ 5V Max Input Capacitance: 2900pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 8 mOhm @ 42A, 10V Alternative Parts (Cross-Reference): NP55N055SDG-E2-AY; NP55N055SDG-E2-AZ; NP55N055SUG-E2-AZ; Introduction Date: December 21, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Application Field: Used in Power Management
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 017801-IRLR3705ZTRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Family Name: IRLR3705 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 42A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 66nC @ 5V Max Input Capacitance: 2900pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 8 mOhm @ 42A, 10V Alternative Parts (Cross-Reference): NP55N055SDG-E2-AY; NP55N055SDG-E2-AZ; NP55N055SUG-E2-AZ; Introduction Date: December 21, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Application Field: Used in Power Management
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Datasheet
Datasheet Summary
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The Infineon N Channel MOSFET transistor, part number 42Y0442, is designed for high-efficiency applications with a continuous drain current rating of 42 A and a maximum drain-to-source voltage of 55 V. It features an ultra-low on-resistance of 0.0065 Ohm, which contributes to reduced power losses during operation. The device operates effectively at a junction temperature of up to 175¬8C, making it suitable for demanding environments. This MOSFET is characterized by fast switching capabilities and a repetitive avalanche rating, enhancing its reliability in various applications. It is RoHS compliant and designed using advanced processing techniques to ensure optimal performance. The transistor is packaged in a D-Pak configuration, facilitating easy integration into electronic circuits. Engineers considering this component for their projects will find it suitable for applications requiring high current handling and low thermal resistance.

Datasheet Summary
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The Infineon N Channel MOSFET transistor, part number 42Y0442, is designed for high-efficiency applications with a continuous drain current rating of 42 A and a maximum drain-to-source voltage of 55 V. It features an ultra-low on-resistance of 0.0065 Ohm, which contributes to reduced power losses during operation. The device operates effectively at a junction temperature of up to 175¬8C, making it suitable for demanding environments. This MOSFET is characterized by fast switching capabilities and a repetitive avalanche rating, enhancing its reliability in various applications. It is RoHS compliant and designed using advanced processing techniques to ensure optimal performance. The transistor is packaged in a D-Pak configuration, facilitating easy integration into electronic circuits. Engineers considering this component for their projects will find it suitable for applications requiring high current handling and low thermal resistance.

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR3705ZTRPBF - 017801-IRLR3705ZTRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR3705ZTRPBF
017801-IRLR3705ZTRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR3705ZTRPBF 017801-IRLR3705ZTRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017801-IRLR3705ZTRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Family Name: IRLR3705 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 42A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 66nC @ 5V Max Input Capacitance: 2900pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 8 mOhm @ 42A, 10V Alternative Parts (Cross-Reference): NP55N055SDG-E2-AY; NP55N055SDG-E2-AZ; NP55N055SUG-E2-AZ; Introduction Date: December 21, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Application Field: Used in Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 017801-IRLR3705ZTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Family Name: IRLR3705
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 42A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 66nC @ 5V
Max Input Capacitance: 2900pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 8 mOhm @ 42A, 10V
Alternative Parts (Cross-Reference): NP55N055SDG-E2-AY; NP55N055SDG-E2-AZ; NP55N055SUG-E2-AZ;
Introduction Date: December 21, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management

Buy Now Datasheet
Single FETs, MOSFETs - IRLR3705ZTRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLR3705ZTRPBFTR-ND
Single FETs, MOSFETs IRLR3705ZTRPBFTR-ND
N-Channel 55V 42A (Tc) 130W (Tc) Surface Mount D-Pak

N-Channel 55V 42A (Tc) 130W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Single FETs, MOSFETs - IRLR3705ZTRPBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLR3705ZTRPBFDKR-ND
Single FETs, MOSFETs IRLR3705ZTRPBFDKR-ND
N-Channel 55V 42A (Tc) 130W (Tc) Surface Mount D-Pak

N-Channel 55V 42A (Tc) 130W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Single FETs, MOSFETs - IRLR3705ZTRPBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLR3705ZTRPBFCT-ND
Single FETs, MOSFETs IRLR3705ZTRPBFCT-ND
N-Channel 55V 42A (Tc) 130W (Tc) Surface Mount D-Pak

N-Channel 55V 42A (Tc) 130W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Singapore, Singapore
55V 42A DPAK MOSFET Transistor
278-IRLR3705ZTRPBF
55V 42A DPAK MOSFET Transistor 278-IRLR3705ZTRPBF
MOSFET N-CH 55V 42A DPAK Product overview: IRLR3705ZTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 42A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 42A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLR3705ZTRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 42A DPAK Product overview: IRLR3705ZTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 42A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 42A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLR3705ZTRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 2579460 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2579460
MOSFETs 2579460
Infineon MOSFET IRLR3705ZTRPBF

Infineon MOSFET IRLR3705ZTRPBF

Supplier's Site
MOSFETs - 2579459 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2579459
MOSFETs 2579459
Infineon MOSFET IRLR3705ZTRPBF

Infineon MOSFET IRLR3705ZTRPBF

Supplier's Site
MOSFETs - 2579460P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2579460P
MOSFETs 2579460P
Infineon MOSFET IRLR3705ZTRPBF

Infineon MOSFET IRLR3705ZTRPBF

Supplier's Site
Single FETs, MOSFETs - IRLR3705ZTRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRLR3705ZTRPBF
Single FETs, MOSFETs IRLR3705ZTRPBF
MOSFET N-CH 55V 42A DPAK

MOSFET N-CH 55V 42A DPAK

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 42 A, 55 V, 0.0065 Ohm, 10 V, 3 V Rohs Compliant Infineon - 42Y0442 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 42 A, 55 V, 0.0065 Ohm, 10 V, 3 V Rohs Compliant Infineon
42Y0442
Mosfet Transistor, N Channel, 42 A, 55 V, 0.0065 Ohm, 10 V, 3 V Rohs Compliant Infineon 42Y0442
MOSFET Transistor, N Channel, 42 A, 55 V, 0.0065 ohm, 10 V, 3 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 42 A, 55 V, 0.0065 ohm, 10 V, 3 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLR3705ZTRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLR3705ZTRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLR3705ZTRPBF
MOSFET N-CH 55V 42A DPAK

MOSFET N-CH 55V 42A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT 55V 89A 8mOhm 44nC Log Lvl

MOSFET MOSFT 55V 89A 8mOhm 44nC Log Lvl

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. RS Components, Ltd. ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017801-IRLR3705ZTRPBF IRLR3705ZTRPBFTR-ND 278-IRLR3705ZTRPBF 2579460 IRLR3705ZTRPBF 42Y0442 IRLR3705ZTRPBF IRLR3705ZTRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR3705ZTRPBF Single FETs, MOSFETs 55V 42A DPAK MOSFET Transistor MOSFETs Single FETs, MOSFETs Mosfet Transistor, N Channel, 42 A, 55 V, 0.0065 Ohm, 10 V, 3 V Rohs Compliant Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 55 volts 55 volts 55 volts
PD 130000 milliwatts 130 milliwatts 130000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) TO-252 (DPAK); TO-252 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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