MOSFET N-CH 55V 2A SOT223 Product overview: IRLL014NTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLL014NTRPBF can be used for catalog matching and distributor lookup.
N-Channel 55V 2A (Ta) 1W (Ta) Surface Mount SOT-223
N-Channel 55V 2A (Ta) 1W (Ta) Surface Mount SOT-223
N-Channel 55V 2A (Ta) 1W (Ta) Surface Mount SOT-223
Manufacturer: Infineon Technologies
Win Source Part Number: 017754-IRLL014NTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Family Name: IRLL014N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 2A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 230pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 140 mOhm @ 2A, 10V
Alternative Parts (Cross-Reference): IRLL014PBF; BUK78150-55/T3; BUK78150-55;
Introduction Date: January 25, 1999
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
HEXFET N-Ch MOSFET 2.8A 55V SOT-223
HEXFET N-Ch MOSFET 2.8A 55V SOT-223
HEXFET N-Ch MOSFET 2.8A 55V SOT-223
MOSFET N-CH 55V 2A SOT223
55V 2A 140mΩ@10V,2A 1W 2V@250uA N Channel SOT-223-3 MOSFETs ROHS
MOSFET MOSFT 55V 2A 140mOhm 9.5nC LogLvl
MOSFET N-CH 55V 2A SOT223
N CHANNEL MOSFET, 55V, 2A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
(PRICE/TC) N CHANNEL MOSFET, 55V, 2A, SOT-223; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:2A; DRAIN SOURCE VOLTAGE VDS:55V; ON RESISTA. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRLL014NTRPBF | IRLL014NPBFTR-ND | 017754-IRLL014NTRPBF | 8303307P | 8303307 | IRLL014NTRPBF | IRLL014NTRPBF | IRLL014NTRPBF | IRLL014NTRPBF | 39M3590 | 17417351 |
| Product Name | 55V 2A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL014NTRPBF | MOSFETs | MOSFETs | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 55V, 2A, Sot-223; Channel Type Infineon | Transistor |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | 55 volts | |||||||
| PD | 2.1 milliwatts | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
