Manufacturer: Infineon Technologies
Win Source Part Number: 875264-IRLU3636PBF
Series: HEXFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 50A (Tc) 143W (Tc) Through Hole I-PAK
Package: TO-251-3 Short Leads, IPak, TO-251AA
Package: Tube
Mounting: Through Hole
Family Name: IRLU3636
Categories: Discrete Semiconductor Products
Case / Package: I-Pak
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Quantity per package: 75
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
N CHANNEL MOSFET, 60V, 99A, IPAK Product overview: IRLU3636PBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 99A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 99A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLU3636PBF can be used for catalog matching and distributor lookup.
N-Channel 60V 50A (Tc) 143W (Tc) Through Hole I-PAK
MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl
MOSFET N-CH 60V 50A IPAK
MOSFET, N-CH, 60V, 50A, TO-251AA; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 875264-IRLU3636PBF | 278-IRLU3636PBF | IRLU3636PBF-ND | IRLU3636PBF | IRLU3636PBF | 34AC1796 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU3636PBF | N-Channel 60V 99A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 50A, To-251Aa; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | ||||
| Package Type | SOT3; I-Pak | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 | ||
| PD | 143000 milliwatts |