Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL014NPBF IRLL014NPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 135227-IRLL014NPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 140 mOhm @ 2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL014NPBF - 135227-IRLL014NPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRLL014NPBF-ND - DigiKey
    DigiKey
  • MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V - 70017100 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLL014NPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 135227-IRLL014NPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 140 mOhm @ 2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL014NPBF - 135227-IRLL014NPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL014NPBF
135227-IRLL014NPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL014NPBF 135227-IRLL014NPBF
Manufacturer: Infineon Technologies Win Source Part Number: 135227-IRLL014NPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 140 mOhm @ 2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 135227-IRLL014NPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 2A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 230pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 140 mOhm @ 2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
55V 2A MOSFET Transistor
278-IRLL014NPBF
55V 2A MOSFET Transistor 278-IRLL014NPBF
MOSFET N-CH 55V 2A SOT223 Product overview: IRLL014NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLL014NPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 2A SOT223 Product overview: IRLL014NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLL014NPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRLL014NPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLL014NPBF-ND
Single FETs, MOSFETs IRLL014NPBF-ND
N-Channel 55V 2A (Ta) 1W (Ta) Surface Mount SOT-223

N-Channel 55V 2A (Ta) 1W (Ta) Surface Mount SOT-223

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V - 70017100 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V
70017100
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V 70017100
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLL014NPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLL014NPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLL014NPBF
MOSFET N-CH 55V 2A SOT223

MOSFET N-CH 55V 2A SOT223

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 135227-IRLL014NPBF 278-IRLL014NPBF IRLL014NPBF-ND 70017100 IRLL014NPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL014NPBF 55V 2A MOSFET Transistor Single FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 55 volts 55 volts
PD 1000 milliwatts 1000 milliwatts 2100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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