Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU3714PBF IRLU3714PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 205489-IRLU3714PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 47W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9.7nC @ 4.5V Max Input Capacitance: 670pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 75
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 205489-IRLU3714PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 47W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9.7nC @ 4.5V Max Input Capacitance: 670pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 75
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU3714PBF - 205489-IRLU3714PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU3714PBF
205489-IRLU3714PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU3714PBF 205489-IRLU3714PBF
Manufacturer: Infineon Technologies Win Source Part Number: 205489-IRLU3714PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 47W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9.7nC @ 4.5V Max Input Capacitance: 670pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 75

Manufacturer: Infineon Technologies
Win Source Part Number: 205489-IRLU3714PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 47W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9.7nC @ 4.5V
Max Input Capacitance: 670pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 75

Buy Now Datasheet
MOSFET N-CH 20V 36A I-PAK - 376-IRLU3714PBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 20V 36A I-PAK
376-IRLU3714PBF
MOSFET N-CH 20V 36A I-PAK 376-IRLU3714PBF
MOSFET N-CH 20V 36A I-PAK

MOSFET N-CH 20V 36A I-PAK

Supplier's Site

Technical Specifications

  Win Source Electronics Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205489-IRLU3714PBF 376-IRLU3714PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLU3714PBF MOSFET N-CH 20V 36A I-PAK
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts 20 volts
PD 47000 milliwatts 47000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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