Mosfet Array 2 N-Channel (Dual) 20V 4.5A 1.5W Surface Mount 6-PQFN (2x2)
Mosfet Array 2 N-Channel (Dual) 20V 4.5A 1.5W Surface Mount 6-PQFN (2x2)
Mosfet Array 2 N-Channel (Dual) 20V 4.5A 1.5W Surface Mount 6-PQFN (2x2)
MOSFET 2N-CH 20V 4.5A PQFN Product overview: IRLHS6276TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRLHS6276TRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1047546-IRLHS6276TRP
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-PQFN (2x2)
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1.1V @ 10μA
Max Gate Charge: 3.1nC @ 4.5V
Max Input Capacitance: 310pF @ 10V
Maximum Rds On at Id,Vgs: 45 mOhm @ 3.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
MOSFET 20V DUAL N-CH LOGIC LEVEL HEXFET
MOSFET, DUAL N CH, 20V, 3.4A, PQFN-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; RoHS Compliant: Yes
MOSFET 2N-CH 20V 4.5A PQFN
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRLHS6276TRPBFDKR-ND | 289-IRLHS6276TRPBF | 1047546-IRLHS6276TRPBF | 2575826 | IRLHS6276TRPBF | 13AC9225 | IRLHS6276TRPBF |
| Product Name | FET, MOSFET Arrays | 20V 4.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLHS6276TRPBF | MOSFETs | MOSFET | Mosfet, Dual N Ch, 20V, 3.4A, Pqfn-6; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 6-PowerVDFN | Tape & Reel (TR) | SOT3; 6-PQFN (2x2) | PQFN | TO-3 | ||
| Polarity | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 1.5 milliwatts | 1500 milliwatts |
