Manufacturer: Infineon Technologies
Win Source Part Number: 1047547-IRLHS6342TRP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-PQFN (2x2)
Dimension: 6-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.7A (Ta), 19A (Tc)
Gate-Source Threshold Voltage: 1.1V @ 10μA
Max Gate Charge: 11nC @ 4.5V
Max Input Capacitance: 1019pF @ 25V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 15.5 mOhm @ 8.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 8.7A/19A 6PQFN Product overview: IRLHS6342TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8.7A, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.7A, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLHS6342TRPBF can be used for catalog matching and distributor lookup.
N-Channel 30V 8.7A (Ta), 19A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2)
N-Channel 30V 8.7A (Ta), 19A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2)
N-Channel 30V 8.7A (Ta), 19A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2)
N CHANNEL MOSFET, 30V, 8.7A, 6-PQFN; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.7A; On Resistance Rds(on):0.012ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes
MOSFET,N CH,30V,8.7A,PQFN22; Transistor Polarity:N Channel; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power RoHS Compliant: Yes
MOSFET 30V 1 N-CH HEXFET 15.5mOhms 11nC
MOSFET N-CH 30V 8.7A/19A 6PQFN
MOSFET N-CH 30V 8.7A/19A 6PQFN
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1047547-IRLHS6342TRPBF | 278-IRLHS6342TRPBF | IRLHS6342TRPBFDKR-ND | 25T5527 | 27T9966 | IRLHS6342TRPBF | IRLHS6342TRPBF | IRLHS6342TRPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLHS6342TRPBF | 30V 8.7A 19A MOSFET Transistor | Single FETs, MOSFETs | N Channel Mosfet, 30V, 8.7A, 6-Pqfn; Transistor Polarity Infineon | Mosfet,n Ch,30V,8.7A,pqfn22; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| PD | 2100 milliwatts | 2.1 milliwatts | 2100 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 6-PQFN (2x2) | Tape & Reel (TR) | 6-PowerVDFN | TO-3 | TO-3 | 6-PowerVDFN | 6-PowerVDFN |
