Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLMS5703TRPBF IRLMS5703TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017781-IRLMS5703TRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Micro6(TSOP-6) Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.4A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLMS5703TRPBF - 017781-IRLMS5703TRPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRLMS5703TRPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRLMS5703PBFTR-ND - DigiKey
    DigiKey
  • MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V - 70017109 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLMS5703TRPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 017781-IRLMS5703TRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Micro6(TSOP-6) Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.4A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLMS5703TRPBF - 017781-IRLMS5703TRPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLMS5703TRPBF
017781-IRLMS5703TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLMS5703TRPBF 017781-IRLMS5703TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017781-IRLMS5703TRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Micro6(TSOP-6) Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.4A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 017781-IRLMS5703TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.7W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro6(TSOP-6)
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.4A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 1.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRLMS5703TRPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRLMS5703TRPBF
Single FETs, MOSFETs IRLMS5703TRPBF
MOSFET P-CH 30V 2.4A MICRO6

MOSFET P-CH 30V 2.4A MICRO6

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
30V 2.4A MOSFET Transistor
278-IRLMS5703TRPBF
30V 2.4A MOSFET Transistor 278-IRLMS5703TRPBF
MOSFET P-CH 30V 2.4A MICRO6 Product overview: IRLMS5703TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLMS5703TRPBF can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 2.4A MICRO6 Product overview: IRLMS5703TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLMS5703TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRLMS5703PBFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLMS5703PBFTR-ND
Single FETs, MOSFETs IRLMS5703PBFTR-ND
P-Channel 30V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6)

P-Channel 30V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6)

Buy Now Datasheet
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V - 70017109 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V
70017109
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V 70017109
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLMS5703TRPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLMS5703TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLMS5703TRPBF
MOSFET P-CH 30V 2.4A MICRO6

MOSFET P-CH 30V 2.4A MICRO6

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRLMS5703TRPBF
MOSFET IRLMS5703TRPBF
MOSFET MOSFT P-Ch -2.3A 200mOhm 7.2nC LogLvl

MOSFET MOSFT P-Ch -2.3A 200mOhm 7.2nC LogLvl

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017781-IRLMS5703TRPBF IRLMS5703TRPBF 278-IRLMS5703TRPBF IRLMS5703PBFTR-ND 70017109 IRLMS5703TRPBF IRLMS5703TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLMS5703TRPBF Single FETs, MOSFETs 30V 2.4A MOSFET Transistor Single FETs, MOSFETs MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 30 volts 30 volts -30 volts
PD 1700 milliwatts 1700 milliwatts 1700 milliwatts 1700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; Micro6(TSOP-6) SOT23; SOT-23-6 Tape & Reel (TR) SOT23; SOT-23-6 Micro6 SOT23; SOT-23-6
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