P-Channel 30V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6)
MOSFET P-CH 30V 2.4A MICRO6 Product overview: IRLMS5703TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLMS5703TRPBF can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 2.4A MICRO6
Manufacturer: Infineon Technologies
Win Source Part Number: 017781-IRLMS5703TRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.7W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro6(TSOP-6)
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.4A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 1.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
MOSFET MOSFT P-Ch -2.3A 200mOhm 7.2nC LogLvl
MOSFET P-CH 30V 2.4A MICRO6
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRLMS5703PBFTR-ND | 278-IRLMS5703TRPBF | IRLMS5703TRPBF | 017781-IRLMS5703TRPBF | IRLMS5703TRPBF | IRLMS5703TRPBF | 70017109 |
| Product Name | Single FETs, MOSFETs | 30V 2.4A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLMS5703TRPBF | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | SOT23; SOT-23-6 | Tape & Reel (TR) | SOT23; SOT-23-6 | SOT3; SOT23; Micro6(TSOP-6) | SOT23; SOT-23-6 | Micro6 | |
| PD | 1700 milliwatts | 1700 milliwatts | 1700 milliwatts | 1700 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
