Infineon Technologies AG Single FETs, MOSFETs IRLMS5703TRPBF

Description
P-Channel 30V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6)
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Description
P-Channel 30V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRLMS5703PBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLMS5703PBFTR-ND
Single FETs, MOSFETs IRLMS5703PBFTR-ND
P-Channel 30V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6)

P-Channel 30V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6)

Buy Now Datasheet
Singapore
30V 2.4A MOSFET Transistor
278-IRLMS5703TRPBF
30V 2.4A MOSFET Transistor 278-IRLMS5703TRPBF
MOSFET P-CH 30V 2.4A MICRO6 Product overview: IRLMS5703TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLMS5703TRPBF can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 2.4A MICRO6 Product overview: IRLMS5703TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLMS5703TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRLMS5703TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRLMS5703TRPBF
Single FETs, MOSFETs IRLMS5703TRPBF
MOSFET P-CH 30V 2.4A MICRO6

MOSFET P-CH 30V 2.4A MICRO6

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLMS5703TRPBF - 017781-IRLMS5703TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLMS5703TRPBF
017781-IRLMS5703TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLMS5703TRPBF 017781-IRLMS5703TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017781-IRLMS5703TRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Micro6(TSOP-6) Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.4A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 017781-IRLMS5703TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.7W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro6(TSOP-6)
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.4A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 1.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFT P-Ch -2.3A 200mOhm 7.2nC LogLvl

MOSFET MOSFT P-Ch -2.3A 200mOhm 7.2nC LogLvl

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLMS5703TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLMS5703TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLMS5703TRPBF
MOSFET P-CH 30V 2.4A MICRO6

MOSFET P-CH 30V 2.4A MICRO6

Supplier's Site
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V - 70017109 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V
70017109
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V 70017109
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRLMS5703PBFTR-ND 278-IRLMS5703TRPBF IRLMS5703TRPBF 017781-IRLMS5703TRPBF IRLMS5703TRPBF IRLMS5703TRPBF 70017109
Product Name Single FETs, MOSFETs 30V 2.4A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLMS5703TRPBF MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.18Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-20V
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel
Package Type SOT23; SOT-23-6 Tape & Reel (TR) SOT23; SOT-23-6 SOT3; SOT23; Micro6(TSOP-6) SOT23; SOT-23-6 Micro6
PD 1700 milliwatts 1700 milliwatts 1700 milliwatts 1700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Tape & Reel (TR) Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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