Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR3714TRR IRLR3714TRR

The IRLR3714 is an N-channel HEXFET® power MOSFET designed for high-frequency switching applications such as synchronous rectification in DC-DC converters and processor power supplies. It is housed in a D-Pak (TO-252AA) package with a thermal resistance of 3.2 °C/W junction-to-case and 110 °C/W junction-to-ambient when mounted on a PCB. The device has a continuous drain current of 36 A at 25 °C and a maximum power dissipation of 47 W at 25 °C. Its drain-source on-resistance is 20 mΩ at 10 V gate drive and 12.8 mΩ at 4.5 V gate drive. It supports a drain-source voltage of 20 V and gate-source voltage of ±20 V, with a junction and storage temperature range of -55 °C to +175 °C. The part meets AEC-Q200 qualification standards and is designed for industrial use.