MOSFET N-CH 100V 1.6A SOT23 Product overview: IRLML0100TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.6A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.6A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLML0100TRPBF can be used for catalog matching and distributor lookup.
N-Channel 100V 1.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23
N-Channel 100V 1.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23
N-Channel 100V 1.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23
Manufacturer: Infineon Technologies
Win Source Part Number: 017762-IRLML0100TRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Family Name: IRLML0100
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro3/SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 25μA
Max Gate Charge: 2.5nC @ 4.5V
Max Input Capacitance: 290pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 220 mOhm @ 1.6A, 10V
Alternative Parts (Cross-Reference): DMN10H220L-13; DMN10H220L-7; AP2330GN-HF-3TR;
Introduction Date: November 24, 2009
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 100V 1.6A SOT23
MOSFET N-CH 100V 1.6A SOT-23-3
MOSFET N-CH 100V 1.6A SOT23
100V 1.6A 1.3W 220mΩ@1.6A,10V 2.5V@25uA N Channel TO-236-3 MOSFETs ROHS
MOSFET MOSFT 100V 1.6A 220mOhm 2.5nC Qg
N CHANNEL MOSFET, 100V, 1.6A SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRLML0100TRPBF | IRLML0100TRPBFTR-ND | 9134054 | 7259350P | 017762-IRLML0100TRPBF | IRLML0100TRPBF | 376-IRLML0100TRPBF | IRLML0100TRPBF | IRLML0100TRPBF | IRLML0100TRPBF | 60R6448 |
| Product Name | 100V 1.6A SOT23 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLML0100TRPBF | Single FETs, MOSFETs | MOSFET N-CH 100V 1.6A SOT-23-3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | N Channel Mosfet, 100V, 1.6A Sot-23; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | 100 volts | ||||||
| Transconductance | 0.0057 kS | ||||||||||
| PD | 1.3 milliwatts | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts |
