Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLML0100TRPBF IRLML0100TRPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 017762-IRLML0100TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Family Name: IRLML0100
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro3/SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 25μA
Max Gate Charge: 2.5nC @ 4.5V
Max Input Capacitance: 290pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 220 mOhm @ 1.6A, 10V
Alternative Parts (Cross-Reference): DMN10H220L-13; DMN10H220L-7; AP2330GN-HF-3TR;
Introduction Date: November 24, 2009
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

MOSFET MOSFT 100V 1.6A 220mOhm 2.5nC Qg

100V 1.6A 1.3W 220mΩ@1.6A,10V 2.5V@25uA N Channel TO-236-3 MOSFETs ROHS

MOSFET N-CH 100V 1.6A SOT23

MOSFET N-CH 100V 1.6A SOT23

N-Channel 100V 1.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23

N-Channel 100V 1.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23

N-Channel 100V 1.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 1.6 A
Maximum Drain Source Voltage = 100 V
Maximum Drain Source Resistance = 235 mOhms
Maximum Gate Threshold Voltage = 2.5V
Minimum Gate Threshold Voltage = 1V
Maximum Gate Source Voltage = -16 V, +16 V
Package Type = SOT-23
Mounting Type = Surface Mount
Pin Count = 3

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 1.6 A
Maximum Drain Source Voltage = 100 V
Maximum Drain Source Resistance = 235 mOhms
Maximum Gate Threshold Voltage = 2.5V
Minimum Gate Threshold Voltage = 1V
Maximum Gate Source Voltage = -16 V, +16 V
Package Type = SOT-23
Mounting Type = Surface Mount
Transistor Configuration = Single

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 1.6 A
Maximum Drain Source Voltage = 100 V
Maximum Drain Source Resistance = 235 mOhms
Maximum Gate Threshold Voltage = 2.5V
Minimum Gate Threshold Voltage = 1V
Maximum Gate Source Voltage = -16 V, +16 V
Package Type = SOT-23
Mounting Type = Surface Mount
Pin Count = 3
Delivery on production packaging - Reel. This product is non-returnable.

MOSFET N-CH 100V 1.6A SOT-23-3