Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLL3303PBF IRLL3303PBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1047567-IRLL3303PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.6A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 840pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 31 mOhm @ 4.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

MOSFET N-CH 30V 4.6A SOT223 Product overview: IRLL3303PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLL3303PBF can be used for catalog matching and distributor lookup.

N-Channel 30V 4.6A (Ta) 1W (Ta) Surface Mount SOT-223