Infineon Technologies AG Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| Rad hard high and low side gate driver - COTS RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side... | |
| Rad hard high and low side gate driver - MIL-PRF-38534 Level B Screening RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high... | |
| Rad hard high and low side gate driver - MIL-PRF-38534 Level S Screening RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high... | |
| Rad hard high and low side gate driver - MIL-PRF-38535 Level B Screening RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high... | |
| Rad hard high and low side gate driver - MIL-PRF-38535 Level S Screening RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high... | |
| Rad hard non-inverting dual output gate driver. - COTS RIC74424 is a high speed, dual channel low side gate driver intended for harsh radiation environments. Summary of features Dual independent... | |
| Rad hard non-inverting dual output gate driver. - MIL-PRF-38535 Level B Screening RIC74424 is a high speed, dual channel low side gate driver intended for harsh radiation environments. Summary of... | |
| Rad hard non-inverting dual output gate driver. - MIL-PRF-38535 Level S Screening RIC74424 is a high speed, dual channel low side gate driver intended for harsh radiation environments. Summary of... | |
| -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package Benefits RoHS Compliant Industry-leading quality P-Channel MOSFET Applications Integrated and discrete solutions for Personal Care products Designers who used this... | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Fast Switching Transistor // SMBT3906S | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // PZTA42 | |
| N-channel enhancement mode small signal transistor for industrial and consumer applications in SOT-23-3 package The N-channel enhancement mode MOSFET SN7002I in SOT-23-3 package features VDS 60 V and R... | |
| N-Channel Small Signal MOSFET 60 V in SOT-323 package Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed... | |
| NPN / PNP Silicon Switching Transistor Array Summary of Features High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS... | |
| NPN Silicon High-Voltage Transistors Summary of Features Low collector-emitter saturation voltage Complementary types: SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
| NPN Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2907A / MMBT2907A (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
| NPN Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching... | |
| NPN Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching... | |
| PNP Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA42 /... | |
| PNP Silicon Switching Transistor Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with... | |
| PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
| PNP Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with... | |
| The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features Low turn-off losses Short tail current Positive temperature coefficient Easy... |
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