Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR8729PBF IRLR8729PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069760-IRLR8729PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 58A (Tc) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 1350pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.9 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Computers & Computer Peripherals, Motor Drive & Control, LED Lighting
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 069760-IRLR8729PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 58A (Tc) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 1350pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.9 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Computers & Computer Peripherals, Motor Drive & Control, LED Lighting
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Suppliers

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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR8729PBF - 069760-IRLR8729PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR8729PBF
069760-IRLR8729PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR8729PBF 069760-IRLR8729PBF
Manufacturer: Infineon Technologies Win Source Part Number: 069760-IRLR8729PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 58A (Tc) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 1350pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.9 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Computers & Computer Peripherals, Motor Drive & Control, LED Lighting

Manufacturer: Infineon Technologies
Win Source Part Number: 069760-IRLR8729PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 58A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 16nC @ 4.5V
Max Input Capacitance: 1350pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.9 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Computers & Computer Peripherals, Motor Drive & Control, LED Lighting

Buy Now Datasheet
Single FETs, MOSFETs - IRLR8729PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLR8729PBF-ND
Single FETs, MOSFETs IRLR8729PBF-ND
N-Channel 30V 58A (Tc) 55W (Tc) Surface Mount D-Pak

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Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLR8729PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLR8729PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLR8729PBF
MOSFET N-CH 30V 58A D-PAK

MOSFET N-CH 30V 58A D-PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 069760-IRLR8729PBF IRLR8729PBF-ND IRLR8729PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLR8729PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 55000 milliwatts
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