Infineon Technologies AG Single FETs, MOSFETs IRLSL4030PBF

Description
N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-262
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Description
N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-262
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 448-IRLSL4030PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IRLSL4030PBF-ND
Single FETs, MOSFETs 448-IRLSL4030PBF-ND
N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-262

N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-262

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1016160-IRLSL4030PBF - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1016160-IRLSL4030PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1016160-IRLSL4030PBF
Win Source Part Number: 1016160-IRLSL4030PBF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HEXFET® Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 370W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262 Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V Vgs (Max): ±16V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001558626 Base Product Number: IRLSL4030 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1016160-IRLSL4030PBF
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HEXFET®
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Vgs (Max): ±16V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001558626
Base Product Number: IRLSL4030
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Singapore
100V 180A MOSFET Transistor
278-IRLSL4030PBF
100V 180A MOSFET Transistor 278-IRLSL4030PBF
MOSFET N-CH 100V 180A TO262 Product overview: IRLSL4030PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLSL4030PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 180A TO262 Product overview: IRLSL4030PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLSL4030PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLSL4030PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLSL4030PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLSL4030PBF
MOSFET N-CH 100V 180A TO262

MOSFET N-CH 100V 180A TO262

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT 100V 180A 4.3mOhm 87nC

MOSFET MOSFT 100V 180A 4.3mOhm 87nC

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Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 448-IRLSL4030PBF-ND 1016160-IRLSL4030PBF 278-IRLSL4030PBF IRLSL4030PBF IRLSL4030PBF
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 100V 180A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3 Tube TO-262-3 Long Leads, I2PAK, TO-262AA
PD 370000 milliwatts 370 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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